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| Datasheet File OCR Text: |
| i nchange semiconductor isc product specification isc w ebsite 1 isc n - c hanne l m osfet t ransistor 2sk 1 403 a description drain current i d = 8 a@ t c =25 drain source voltage - : v dss = 6 5 0v(min) fast switching speed applications switching regulator and dc - dc converter absolute maximum ra tings(t a =25 symbol p arameter value unit v dss drain - s ource v oltage (v gs =0) 65 0 v v gs gate - s ource v oltage 3 0 v i d drain current - continuous@ tc=25 8 a p tot total dissipation@tc=25 1 00 w t j max. operating junction t empe rature 150 t stg storage t emperature range - 5 5~150
i nchange semiconductor isc product specification isc w ebsite 2 isc n - c hanne l m osfet t ransistor 2sk 1 403 a c =25 symbol parameter conditions min typ max unit v (br)dss drain - s ource b reakdown v oltage v gs = 0; i d = 10 ma 6 5 0 v v gs( th ) gate t hreshold v oltage v ds = 10 v; i d = 1 ma 2.0 3 . 0 v r ds( on ) drain - s ource o n - stage r esistance v gs =1 0 v; i d = 4 a 1.0 1. 4 i gss gate s ource l eakage c urrent v gs = 25 v;v ds = 0 1 0 a i dss zero g ate v oltage d rain c urrent v ds = 55 0 v; v gs = 0 25 0 a v sd diode f orward v oltage i s = 8 a; v gs =0 0.95 v t r rise time v gs =10v; i d =4a; r l =7.5 50 ns t d(on ) turn - on delay time 15 t f fall time 45 t d(off) turn - off delay time 105 |
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